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SI7116BDN-T1-GE3

SI7116BDN-T1-GE3

MOSFET N-CH 40V 18.4A/65A PPAK

SI7116BDN-T1-GE3

SI7116BDN-T1-GE3

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Part No :

SI7116BDN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 40V 18.4A/65A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
457145 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:18.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:7.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1915 pF @ 20 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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