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FCH190N65F-F155

FCH190N65F-F155

MOSFET N-CH 650V 20.6A TO247

FCH190N65F-F155

FCH190N65F-F155

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Part No :

FCH190N65F-F155

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 20.6A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
596859 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FCH190N65F-F155 PDF
Type Description
Series:FRFET®, SuperFET® II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.225 pF @ 100 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 Long Leads
Package / Case:TO-247-3
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