Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOH3254Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 5A SOT223-4 |
|
BTS244ZE3043AKSA2IR (Infineon Technologies) |
MOSFET N-CH 55V 35A TO220-5-12 |
|
IXTH20N65XWickmann / Littelfuse |
MOSFET N-CH 650V 20A TO247 |
|
IRF8734PBFRochester Electronics |
HEXFET POWER MOSFET |
|
STB11N65M5STMicroelectronics |
MOSFET N CH 650V 9A D2PAK |
|
CSD16410Q5ATexas Instruments |
MOSFET N-CH 25V 16A/59A 8VSON |
|
TK28N65W,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 27.6A TO247 |
|
MCH3479-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.5A SC70 |
|
BUK7Y7R6-40EXNexperia |
MOSFET N-CH 40V 79A LFPAK56 |
|
UF3C065080B7SUnitedSiC |
SICFET P-CH 650V 27A D2PAK-7 |
|
CSD19531Q5ATTexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
SPU03N60C3BKMA1Rochester Electronics |
MOSFET N-CH 600V 3.2A TO251-3 |
|
SFP9634Rochester Electronics |
MOSFET P-CH 250V 5A TO220-3 |