MOSFET N-CH 80V 8A/30A 8WDFN
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 21.1mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 510 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 46W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VN10LPZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA TO92-3 |
|
SIA817EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.5A PPAK SC70-6 |
|
NTD25P03LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 25A DPAK |
|
FDD5612Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5.4A TO252-3 |
|
PSMN2R8-40YSDXNexperia |
MOSFET N-CH 40V 160A LFPAK56 |
|
BSZ240N12NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 37A 8TSDSON |
|
FQP19N20CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 19A TO220-3 |
|
SCT3105KW7TLROHM Semiconductor |
TRANS SJT N-CH 1200V 23A TO263-7 |
|
CSD23381F4TTexas Instruments |
MOSFET P-CH 12V 2.3A 3PICOSTAR |
|
RSF015N06FRATLROHM Semiconductor |
MOSFET N-CH 60V 1.5A TUMT3 |
|
IRF7413TRPBF-1Rochester Electronics |
MOSFET N-CH 30V 13A 8SO |
|
IRLR3705ZPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IPD60R210PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16A TO252-3 |