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STH315N10F7-6

STH315N10F7-6

MOSFET N-CH 100V 180A H2PAK-6

STH315N10F7-6

STH315N10F7-6

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Part No :

STH315N10F7-6

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 100V 180A H2PAK-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10130 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
PDF
STH315N10F7-6 PDF
Type Description
Series:Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):315W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-6
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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