MOSFET N-CHANNEL 600V 2A TO251
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.5 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 362 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 52.1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 (IPAK) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPCA8026(TE12L,Q,MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 45A 8SOP |
|
HUFA76645S3SRochester Electronics |
MOSFET N-CH 100V 75A D2PAK |
|
TK8A50DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 7.5A TO220SIS |
|
NVTFS4C13NWFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 14A 8WDFN |
|
BUK7610-55AL,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
FDMC8854Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 15A 8MLP |
|
TSM320N03CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 5.5A SOT23 |
|
IXTQ450P2Wickmann / Littelfuse |
MOSFET N-CH 500V 16A TO3P |
|
PMZB200UNEYLNexperia |
MOSFET N-CH 30V 1.4A DFN1006B-3 |
|
IXFP22N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 22A TO220AB |
|
NVMFS5C604NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 40A/287A 5DFN |
|
BSZ105N04NSGATMA1Rochester Electronics |
OPTLMOS POWER-MOSFET |
|
BSS138Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 220MA SOT23-3 |