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SISS66DN-T1-GE3

SISS66DN-T1-GE3

MOSFET N-CH 30V 49.1/178.3A PPAK

SISS66DN-T1-GE3

SISS66DN-T1-GE3

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Part No :

SISS66DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 49.1/178.3A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16695 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:49.1A (Ta), 178.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.38mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85.5 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:3327 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
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