MOSFET N-CH 850V 8A TO263HV
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 850 V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 850mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 654 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263HV |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PMZ600UNEYLNexperia |
MOSFET N-CH 20V 600MA DFN1006-3 |
|
BUK9907-40ATC,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220-5 |
|
SI5404BDC-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 5.4A 1206-8 |
|
FQD630TMRochester Electronics |
MOSFET N-CH 200V 7A DPAK |
|
IPB60R190C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A D2PAK |
|
IPD35N12S3L24ATMA1Rochester Electronics |
IPD35N12 - 120V-300V N-CHANNEL A |
|
R6020FNXROHM Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
|
AOT2610LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 9A/55A TO220 |
|
5LP01M-TL-ERochester Electronics |
MOSFET P-CH 50V 70MA 3MCP |
|
IXFT16N80PWickmann / Littelfuse |
MOSFET N-CH 800V 16A TO268 |
|
SPA15N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A TO220-FP |
|
IRF6620TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 27A DIRECTFET |
|
STW33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A TO247 |