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FQB9N25CTM

FQB9N25CTM

MOSFET N-CH 250V 8.8A D2PAK

FQB9N25CTM

FQB9N25CTM

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Part No :

FQB9N25CTM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 8.8A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13222 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FQB9N25CTM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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