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IRFR9N20DPBF

IRFR9N20DPBF

MOSFET N-CH 200V 9.4A DPAK

IRFR9N20DPBF

IRFR9N20DPBF

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Part No :

IRFR9N20DPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 9.4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11045 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IRFR9N20DPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9N20DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFR9N20DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFR9N20DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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