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SUD35N10-26P-GE3

SUD35N10-26P-GE3

MOSFET N-CH 100V 35A TO252

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SUD35N10-26P-GE3

SUD35N10-26P-GE3

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Part No :

SUD35N10-26P-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 35A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11240 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
SUD35N10-26P-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 12 V
FET Feature:-
Power Dissipation (Max):8.3W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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