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IXFA3N120

IXFA3N120

MOSFET N-CH 1200V 3A TO263

IXFA3N120

IXFA3N120

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Part No :

IXFA3N120

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1200V 3A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
3041250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IXFA3N120 PDF
Type Description
Series:HiPerFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1050 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (IXFA)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFA3N120 is available at GangBo-ic.com, Please review product page below for detailed information, including IXFA3N120 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXFA3N120 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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