FIXED IND 150UH 260MA 2.8344 OHM
MOSFET N-CH 650V 42A TO247-4L
Type | Description |
---|---|
Series: | MDmesh™ V |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 63mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 98 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-4L |
Package / Case: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
BSC240N12NS3GRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
PSMN085-150K,518-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
![]() |
NX7002BKM315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
FCU360N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V IPAK |
![]() |
IRFB3207PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 170A TO220AB |
![]() |
SIA471DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12.9A/30.3A PPAK |
![]() |
IRLZ24NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 18A TO220AB |
![]() |
IXTH75N10L2Wickmann / Littelfuse |
MOSFET N-CH 100V 75A TO247 |
![]() |
NVTFS4823NTAGRochester Electronics |
30 V, 30 A, 10.5 MILLI OHM, SING |
![]() |
STB75NH02LT4STMicroelectronics |
MOSFET N-CH 24V 60A D2PAK |
![]() |
NTK3142PT1GRochester Electronics |
MOSFET P-CH 20V 215MA SOT723 |
![]() |
STD30N10F7STMicroelectronics |
MOSFET N-CH 100V 32A DPAK |
![]() |
IPP65R600E6XKSA1Rochester Electronics |
600V COOLMOS POWER TRANSISTOR |