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NVB190N65S3F

NVB190N65S3F

MOSFET N-CH 650V 20A D2PAK-3

NVB190N65S3F

NVB190N65S3F

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Part No :

NVB190N65S3F

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 20A D2PAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
155263200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
Type Description
Series:Automotive, AEC-Q101, SuperFET® III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1605 pF @ 400 V
FET Feature:-
Power Dissipation (Max):162W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-3 (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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