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IPB096N03LGATMA1

IPB096N03LGATMA1

MOSFET N-CH 30V 35A D2PAK

IPB096N03LGATMA1

IPB096N03LGATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB096N03LGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 35A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
842984 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 09 - Nov 13 2025
PDF
IPB096N03LGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.6 pF @ 15 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB096N03LGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB096N03LGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB096N03LGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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