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IPB096N03LGATMA1

IPB096N03LGATMA1

MOSFET N-CH 30V 35A D2PAK

IPB096N03LGATMA1

IPB096N03LGATMA1

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Part No :

IPB096N03LGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 35A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
842984 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 03 - Feb 07 2025
PDF
IPB096N03LGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.6 pF @ 15 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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