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BSS138LT1G

BSS138LT1G

MOSFET N-CH 50V 200MA SOT23-3

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INSULATION DISPLACEMENT TERMINAL

BSS138LT1G

BSS138LT1G

Image is for reference, please contact us to get the real picture

Part No :

BSS138LT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 50V 200MA SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
772977 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 08 - Nov 12 2025
PDF
BSS138LT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:-
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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