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R6009END3TL1

R6009END3TL1

MOSFET N-CH 600V 9A TO252

R6009END3TL1

R6009END3TL1

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Part No :

R6009END3TL1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 9A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12530 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 07 - Feb 11 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
R6009END3TL1 is available at GangBo-ic.com, Please review product page below for detailed information, including R6009END3TL1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6009END3TL1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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