MOSFET N-CH 30V 7A HUML2020L8
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 21.4mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 220 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | HUML2020L8 |
Package / Case: | 8-PowerUDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STD4NK60Z-1STMicroelectronics |
MOSFET N-CH 600V 4A IPAK |
|
IRLR024TRLVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
R6007JND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 7A TO252 |
|
AOW7S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO262 |
|
BSP373L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW90R500C3FKSA1Rochester Electronics |
MOSFET N-CH 900V 11A TO247-3 |
|
IPB60R060C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 35A TO263-3 |
|
AOT12N40LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 400V 11A TO220 |
|
HUF76429S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 47A D2PAK |
|
PSMN5R0-80PS,127Nexperia |
MOSFET N-CH 80V 100A TO220AB |
|
DMN4035LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 4.6A SOT23 |
|
CSD18509Q5BTexas Instruments |
MOSFET N-CH 40V 100A 8VSON |
|
BUK9M156-100EXNexperia |
MOSFET N-CH 100V 9.3A LFPAK33 |