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PSMN1R9-40YSDX

PSMN1R9-40YSDX

MOSFET N-CH 40V 200A LFPAK56

PSMN1R9-40YSDX

PSMN1R9-40YSDX

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Part No :

PSMN1R9-40YSDX

Manufacturer
Nexperia
Description
MOSFET N-CH 40V 200A LFPAK56
Catalog
Transistors - FETs, MOSFETs - Single
Availability
272027 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
Type Description
Series:TrenchMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6198 pF @ 20 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
PSMN1R9-40YSDX is available at GangBo-ic.com, Please review product page below for detailed information, including PSMN1R9-40YSDX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PSMN1R9-40YSDX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

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