SICFET N-CH 650V 95A H2PAK-7
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 26mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 162 nC @ 18 V |
Vgs (Max): | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3315 pF @ 520 V |
FET Feature: | - |
Power Dissipation (Max): | 360W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | H2PAK-7 |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SI8406DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 16A 6MICRO FOOT |
![]() |
NTMS4704NR2GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IRFH8316TRPBF-IRRochester Electronics |
IRFH8316 - HEXFET POWER MOSFET |
![]() |
PMV100ENEARRochester Electronics |
30 V, N-CHANNEL TRENCH MOSFET |
![]() |
BSZ039N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 18A/40A TSDSON |
![]() |
BUK9Y22-30B,115Nexperia |
MOSFET N-CH 30V 37.7A LFPAK56 |
![]() |
IRF6636TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 18A DIRECTFET |
![]() |
STP360N4F6STMicroelectronics |
MOSFET N-CH 40V 120A TO220 |
![]() |
AOD409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 26A TO252 |
![]() |
SI7153DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 18A PPAK1212-8 |
![]() |
2SK3814-AZRochester Electronics |
MOSFET N-CH 60V 60A TO251 |
![]() |
IPD70N04S307ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
TK46A08N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 46A TO220SIS |