MOSFET P-CH 30V 25A/50A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Last Time Buy |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 51 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 2940 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 6.25W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN-EP (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSC042N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 20A/93A TDSON |
|
FDMC86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 1A/1.8A 8MLP |
|
STW11NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 8.3A TO247-3 |
|
STB7NK80ZT4STMicroelectronics |
MOSFET N-CH 800V 5.2A D2PAK |
|
SSM3J328R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |
|
STWA40N90K5STMicroelectronics |
MOSFET N-CH 900V 40A TO247 |
|
IXFH12N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 12A TO247AD |
|
RFD14N05SM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 14A TO252AA |
|
IPB65R380C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF530STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 14A TO263 |
|
FDV045P20LSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.15A SOT23-3 |
|
IAUC80N04S6L032ATMA1IR (Infineon Technologies) |
IAUC80N04S6L032ATMA1 |
|
IPW60R120P7Rochester Electronics |
N-CHANNEL POWER MOSFET |