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IPB180P04P403ATMA2

IPB180P04P403ATMA2

MOSFET P-CH 40V 180A TO263-7

IPB180P04P403ATMA2

IPB180P04P403ATMA2

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Part No :

IPB180P04P403ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 40V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
741174 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:Automotive, AEC-Q101, OptiMOS®-P2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:17640 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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