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EPC2012C

EPC2012C

GANFET N-CH 200V 5A DIE OUTLINE

EPC2012C

EPC2012C

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Part No :

EPC2012C

Manufacturer
EPC
Description
GANFET N-CH 200V 5A DIE OUTLINE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
29227 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
EPC2012C PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die Outline (4-Solder Bar)
Package / Case:Die
EPC2012C is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2012C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2012C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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