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TPW1R104PB,L1XHQ

TPW1R104PB,L1XHQ

MOSFET N-CH 40V 120A 8DSOP

TPW1R104PB,L1XHQ

TPW1R104PB,L1XHQ

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Part No :

TPW1R104PB,L1XHQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 40V 120A 8DSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19880 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.14mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4560 pF @ 10 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 132W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-DSOP Advance
Package / Case:8-PowerVDFN
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