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FQB3N30TM

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FQB3N30TM

FQB3N30TM

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Part No :

FQB3N30TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 300V 3.2A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12934 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FQB3N30TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB3N30TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB3N30TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB3N30TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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