MOSFET N-CH 100V 7.5A/43A TO251A
Type | Description |
---|---|
Series: | SDMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta), 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Rds On (Max) @ Id, Vgs: | 24mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 42 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 2200 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 3W (Ta), 100W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251A |
Package / Case: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NX7002BKMB315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NDS355ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.7A SUPERSOT3 |
|
NTD4865N-35GRochester Electronics |
MOSFET N-CH 25V 8.5A/44A IPAK |
|
IRFBF20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 900V 1.7A TO220AB |
|
SIHB12N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO263 |
|
SI3129DV-T1-GE3Vishay / Siliconix |
P-CHANNEL 80 V (D-S) MOSFET TSOP |
|
DMN2055U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.8A SOT23 T&R 3 |
|
IPB60R120P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 26A D2PAK |
|
RU1E002SPTCLROHM Semiconductor |
MOSFET P-CH 30V 250MA UMT3F |
|
IRLH6224TRPBFRochester Electronics |
MOSFET N-CH 20V 28A/105A 8PQFN |
|
IRFR5505PBFRochester Electronics |
POWER MOSFET |
|
SPD03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD40DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 4.3A TO252-3 |