MOSFET N-CH 150V 76A TO220AB
Type | Description |
---|---|
Series: | HiPerFET™, TrenchT2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 97 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5800 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 350W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK761R4-30E,118Rochester Electronics |
MOSFET N-CH 30V 120A D2PAK |
|
SN7002NH6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
|
SIHP12N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220AB |
|
DIT050N06Diotec Semiconductor |
MOSFET N-CH 60V 50A TO220AB |
|
FQD1N60TFRochester Electronics |
MOSFET N-CH 600V 1A DPAK |
|
DN2625K4-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 1.1A TO252 |
|
NTMYS5D3N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/71A 4LFPAK |
|
2SK1519-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN3010LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 13.1A/43A TO252 |
|
SIHB22N60ET1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |
|
STY60NM50STMicroelectronics |
MOSFET N-CH 500V 60A MAX247 |
|
FQP50N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 52.4A TO220-3 |
|
ZDX130N50ROHM Semiconductor |
MOSFET N-CH 500V 13A TO220FM |