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RD3G07BATTL1

RD3G07BATTL1

PCH -40V -70A POWER MOSFET - RD3

RD3G07BATTL1

RD3G07BATTL1

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Part No :

RD3G07BATTL1

Manufacturer
ROHM Semiconductor
Description
PCH -40V -70A POWER MOSFET - RD3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
949894 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:70A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5550 pF @ 20 V
FET Feature:-
Power Dissipation (Max):101W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RD3G07BATTL1 is available at GangBo-ic.com, Please review product page below for detailed information, including RD3G07BATTL1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RD3G07BATTL1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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