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NTHD4N02FT1G

NTHD4N02FT1G

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Part No :

NTHD4N02FT1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 20V 2.9A CHIPFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
238224 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
NTHD4N02FT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):910mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ChipFET™
Package / Case:8-SMD, Flat Lead
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