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IPN95R1K2P7ATMA1

IPN95R1K2P7ATMA1

MOSFET N-CH 950V 6A SOT223

IPN95R1K2P7ATMA1

IPN95R1K2P7ATMA1

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Part No :

IPN95R1K2P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 950V 6A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11026 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPN95R1K2P7ATMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:478 pF @ 400 V
FET Feature:-
Power Dissipation (Max):7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
IPN95R1K2P7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN95R1K2P7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN95R1K2P7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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