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IPN95R1K2P7ATMA1

IPN95R1K2P7ATMA1

MOSFET N-CH 950V 6A SOT223

IPN95R1K2P7ATMA1

IPN95R1K2P7ATMA1

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Part No :

IPN95R1K2P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 950V 6A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11026 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
PDF
IPN95R1K2P7ATMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:478 pF @ 400 V
FET Feature:-
Power Dissipation (Max):7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
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