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IPD110N12N3GATMA1

IPD110N12N3GATMA1

MOSFET N-CH 120V 75A TO252-3

241-7-16L

241-7-16L

PWR XFMR LAMINATED 56VA CHAS MT

IPD110N12N3GATMA1

IPD110N12N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD110N12N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 120V 75A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
979797 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPD110N12N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:3V @ 83µA (Typ)
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4310 pF @ 60 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD110N12N3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD110N12N3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD110N12N3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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