MOSFET N-CH 800V 18A D3PAK
MOSFET N-CH 40V 58A PPAK SO-8
TACT 6.2 X 6.2, 5.1 MM H, 4.0N,
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7.35mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 55 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2450 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRF9Z34NRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |
|
IPD110N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 75A TO252-3 |
|
RQ3E080GNTBROHM Semiconductor |
MOSFET N-CH 30V 8A 8HSMT |
|
NTTFS4985NFTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FDMC2674Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 220V 1A/7A 8MLP |
|
IPN95R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A SOT223 |
|
IXTH12N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO247 |
|
2SK2499-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI1078X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 1.02A SOT563F |
|
2SK3482-AZRenesas Electronics America |
MOSFET N-CH 100V 36A TO251 |
|
DMP1555UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 200MA 3DFN |
|
FDS7779ZRochester Electronics |
MOSFET P-CH 30V 16A 8SOIC |
|
IXFK36N60PWickmann / Littelfuse |
MOSFET N-CH 600V 36A TO264AA |