N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR3709ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
RM5N800HDRectron USA |
MOSFET N-CHANNEL 800V 5A TO263-2 |
|
NP90N055VDG-E1-AYRochester Electronics |
MOSFET N-CH 55V 90A TO252 |
|
CSD16411Q3Texas Instruments |
MOSFET N-CH 25V 14A/56A 8VSON |
|
SQJ868EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
|
AUIRF9Z34NRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |
|
IPD110N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 75A TO252-3 |
|
RQ3E080GNTBROHM Semiconductor |
MOSFET N-CH 30V 8A 8HSMT |
|
NTTFS4985NFTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FDMC2674Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 220V 1A/7A 8MLP |
|
IPN95R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A SOT223 |
|
IXTH12N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO247 |
|
2SK2499-AZRochester Electronics |
N-CHANNEL POWER MOSFET |