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1808Y1000224KDR

1808Y1000224KDR

CAP CER 0.22UF 100V X7R 1808

STI40N65M2

STI40N65M2

MOSFET N-CH 650V 32A I2PAK

STI40N65M2

STI40N65M2

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Part No :

STI40N65M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 32A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10849 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
PDF
STI40N65M2 PDF
Type Description
Series:MDmesh™ M2
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2355 pF @ 100 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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