MOSFET N-CH 40V 300A 8VSON
TAPE DBL COATED GRY 4"X 10" 6/PK
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.96mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 153 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 11400 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 156W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR48ZPBFRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
RQ3E150MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 15A 8HSMT |
|
TK40S06N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A DPAK |
|
APT6029SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 21A D3PAK |
|
NVGS3130NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 4.2A 6TSOP |
|
IRFR9120NTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A DPAK |
|
BSC050N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 18A/85A TDSON |
|
XP232N03013R-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 300MA SOT323-3 |
|
SPW47N65C3FKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 4 |
|
IRF520SPBFVishay / Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
|
FDP085N10A-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 96A TO220-3 |
|
IRFR7746TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 56A DPAK |
|
SIRA84BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 22A/70A PPAK SO8 |