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PU3921JKM130R002L

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RES 0.002 OHM 5% 3W

IPD60R180P7ATMA1

IPD60R180P7ATMA1

MOSFET N-CH 650V 18A TO252-3

IPD60R180P7ATMA1

IPD60R180P7ATMA1

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Part No :

IPD60R180P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 18A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
579657 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPD60R180P7ATMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:-
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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