XTAL OSC VCXO 625.0000MHZ LVDS
MOSFET P-CH 500V 8A TO268
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 130 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 180W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI1403BDL-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 1.4A SC70-6 |
|
BUK9575-100A,127Rochester Electronics |
PFET, 23A I(D), 100V, 0.084OHM, |
|
STP3LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 2A TO220 |
|
SQSA80ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 18A PPAK1212-8 |
|
CSD25401Q3Rochester Electronics |
MOSFET P-CH 20V 14A/60A 8VSON |
|
FDS6064N7Rochester Electronics |
MOSFET N-CH 20V 23A 8SO |
|
IPD60R180P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO252-3 |
|
STP10NM60NDSTMicroelectronics |
MOSFET N-CH 600V 8A TO220 |
|
STB43N60DM2STMicroelectronics |
MOSFET N-CH 600V 34A D2PAK |
|
HUFA75639S3STRochester Electronics |
56A, 100V, 0.025OHM, N-CHANNEL, |
|
CMS45P03H8-HFComchip Technology |
MOSFET P-CH 30V 9.6A/45A DFN5X6 |
|
FDMS7670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A/42A 8PQFN |
|
IRF830APBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 5A TO220AB |