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RQ1C065UNTR

RQ1C065UNTR

MOSFET N-CH 20V 6.5A TSMT8

RQ1C065UNTR

RQ1C065UNTR

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Part No :

RQ1C065UNTR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 20V 6.5A TSMT8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12106 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 03 - Feb 07 2025
PDF
RQ1C065UNTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 10 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT8
Package / Case:8-SMD, Flat Lead
RQ1C065UNTR is available at GangBo-ic.com, Please review product page below for detailed information, including RQ1C065UNTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ1C065UNTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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