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SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

MOSFET N-CH 650V 5.6A PPAK SO-8

C2HAC07I1626B1

C2HAC07I1626B1

NET-CONTAIN ADJUSTABLE VERTICAL

AS-L-TM

AS-L-TM

DOUBLE-SIDED TAPE FOR AS-L5

SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIHJ6N65E-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 650V 5.6A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11626 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SIHJ6N65E-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:868mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:596 pF @ 100 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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