TVS DIODE 28V 59V DO216AA
MOSFET P-CH 12V 2.7A SC88
SMA-RJB/TNC-SJB G174 9I
1/2" HEAT SHRINK (3:1) SLEEVING,
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12 V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 3.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.6 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 850 pF @ 12 V |
FET Feature: | - |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK5A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 4.5A TO220SIS |
|
BSZ011NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 35A/40A TSDSON |
|
IPS80R750P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 7A TO251-3 |
|
BSS83PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 330MA SOT23-3 |
|
IRFH7446TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 85A 8PQFN |
|
FDP030N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A TO220-3 |
|
STL24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A PWRFLAT HV |
|
IRF6674TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 13.4A DIRECTFET |
|
NTD5C668NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A/48A DPAK |
|
FK3306010LPanasonic |
MOSFET N-CH 60V 100MA SSSMINI3 |
|
FDV302PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXFN48N50QWickmann / Littelfuse |
MOSFET N-CH 500V 48A SOT-227B |
|
VN4012L-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 160MA TO92-3 |