MOSFET N-CH 200V 104A ISOTOP
Type | Description |
---|---|
Series: | * |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 104A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 6850 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Chassis Mount |
Supplier Device Package: | ISOTOP® |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FCP165N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO220-3 |
|
SSM6J206FE(TE85L,FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 2A ES6 |
|
BUK9609-75A,118Nexperia |
MOSFET N-CH 75V 75A D2PAK |
|
NVTFS4824NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.2A 8WDFN |
|
NTMFS4841NT1GRochester Electronics |
MOSFET N-CH 30V 8.3A/57A 5DFN |
|
STF6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A TO220FP |
|
PSMN3R3-80PS,127Nexperia |
MOSFET N-CH 80V 120A TO220AB |
|
DMG10N60SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 12A TO220AB |
|
IPC70N04S5L4R2ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A 8TDSON-34 |
|
SIHP12N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 10.5A TO220AB |
|
NVJS3151PT1GRochester Electronics |
MOSFET P-CH 12V 2.7A SC88 |
|
TK5A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 4.5A TO220SIS |
|
BSZ011NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 35A/40A TSDSON |