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IPD025N06NATMA1

IPD025N06NATMA1

MOSFET N-CH 60V 90A TO252-3

IPD025N06NATMA1

IPD025N06NATMA1

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Part No :

IPD025N06NATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 90A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10689 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
IPD025N06NATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD025N06NATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD025N06NATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD025N06NATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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