MOSFET N-CH 60V 1.5A TUMT3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 290mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2 nC @ 5 V |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 110 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT3 |
Package / Case: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMP1012UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 12.6A/20A 6UDFN |
|
IXFR64N60PWickmann / Littelfuse |
MOSFET N-CH 600V 36A ISOPLUS247 |
|
PHT6NQ10T,135Nexperia |
MOSFET N-CH 100V 3A SOT223 |
|
IPB60R160C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23.8A D2PAK |
|
2SJ649-AZRenesas Electronics America |
MOSFET P-CH 60V 20A TO220 |
|
IRFU9020PBFVishay / Siliconix |
MOSFET P-CH 50V 9.9A TO251AA |
|
FDL100N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 100A TO264-3 |
|
FKP202Sanken Electric Co., Ltd. |
MOSFET N-CH 200V 45A TO220 |
|
R6020FNJTLROHM Semiconductor |
MOSFET N-CH 600V 20A LPT |
|
SI8465DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
|
2SK3294-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFIBC40GVishay / Siliconix |
MOSFET N-CH 600V 3.5A TO220-3 |
|
FDMS86163PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 7.9A/50A 8PQFN |