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STI18N65M2

STI18N65M2

Image is for reference, please contact us to get the real picture

Part No :

STI18N65M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 12A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10845 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
STI18N65M2 PDF
Type Description
Series:MDmesh™ M2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:770 pF @ 100 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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