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IRFD210

IRFD210

0.6A 200V 1.500 OHM N-CHANNEL

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IRFD210

IRFD210

Image is for reference, please contact us to get the real picture

Part No :

IRFD210

Manufacturer
Rochester Electronics
Description
0.6A 200V 1.500 OHM N-CHANNEL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11335 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 20 - Feb 24 2025
PDF
IRFD210 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)
IRFD210 is available at GangBo-ic.com, Please review product page below for detailed information, including IRFD210 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFD210 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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