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IPI023NE7N3 G

IPI023NE7N3 G

MOSFET N-CH 75V 120A TO262-3

IPI023NE7N3 G

IPI023NE7N3 G

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Part No :

IPI023NE7N3 G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 30 - Jan 03 2024
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:14.4 pF @ 37.5 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI023NE7N3 G is available at GangBo-ic.com, Please review product page below for detailed information, including IPI023NE7N3 G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI023NE7N3 G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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