MOSFET N-CH 650V 100A PLUS247-3
IC BAT CHG MULTCHEM 1-4CL 8TSSOP
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 30mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 180 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 11300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1040W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI3473DDV-T1-GE3Vishay / Siliconix |
MOSFET P-CHANNEL 12V 8A 6TSOP |
|
SIHF15N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 15A TO220 |
|
FQPF12P10Rochester Electronics |
MOSFET P-CH 100V 8.2A TO220F |
|
SI8409DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 30V 4.6A 4MICROFOOT |
|
SIE812DF-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 60A 10POLARPAK |
|
STB21N90K5STMicroelectronics |
MOSFET N-CH 900V 18.5A D2PAK |
|
CSD17570Q5BTTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
UPA653TT-E1-ARochester Electronics |
MOSFET P-CH 30V 2.5A 6WSOF |
|
RJK0204DPA-00#J53Rochester Electronics |
MOSFET N-CH 25V 50A 8WPAK |
|
SI4628DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 38A 8SO |
|
IRFR110TRLPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IRF1407STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 100A D2PAK |
|
FDMS015N04BRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |