HEXFET POWER MOSFET
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 61 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.5 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 120W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFS3806PBFRochester Electronics |
MOSFET N-CH 60V 43A D2PAK |
|
RM120N60T2Rectron USA |
MOSFET N-CH 60V 120A TO220-3 |
|
SI1302DL-T1-BE3Vishay / Siliconix |
MOSFET N-CH 30V 600MA SC70-3 |
|
IRF250P225IR (Infineon Technologies) |
MOSFET N-CH 250V 69A TO247AC |
|
FDB7030BLRochester Electronics |
60A, 30V, 0.009OHM, N-CHANNEL, |
|
TK10J80E,S1EToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 10A TO3P |
|
SI3424BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A 6TSOP |
|
AON7421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 30A/50A 8DFN |
|
APT5024SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 22A D3PAK |
|
NTK3134NT5HRochester Electronics |
MOSFET FIELD EFFECT SOT723 |
|
SQ3427AEEV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
FDMS86181Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A/124A 8PQFN |
|
DMP2023UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 7.6A 6UDFN |