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IRFD113PBF

IRFD113PBF

MOSFET N-CH 60V 800MA 4DIP

OS1116DH-BESW1

OS1116DH-BESW1

DANGER ALUMINIUM SIGN 7" X 10"

IRFD113PBF

IRFD113PBF

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Part No :

IRFD113PBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 800MA 4DIP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11637 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRFD113PBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)
IRFD113PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFD113PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFD113PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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