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PSMN102-200Y,115

PSMN102-200Y,115

MOSFET N-CH 200V 21.5A LFPAK56

EG21GGB-MINIPCIE-S

EG21GGB-MINIPCIE-S

DESCRIPTION PLACE HOLDER

PSMN102-200Y,115

PSMN102-200Y,115

Image is for reference, please contact us to get the real picture

Part No :

PSMN102-200Y,115

Manufacturer
Nexperia
Description
MOSFET N-CH 200V 21.5A LFPAK56
Catalog
Transistors - FETs, MOSFETs - Single
Availability
488748 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
PSMN102-200Y,115 PDF
Type Description
Series:TrenchMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:102mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:30.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1568 pF @ 30 V
FET Feature:-
Power Dissipation (Max):113W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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